2SA1075

Type Designator: 2SA1075

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 135 °C

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 300 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -