2SB688

Type Designator: 2SB688

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 280 pF

Forward Current Transfer Ratio (hFE), MIN: 55

Noise Figure, dB: -