2SB734

Type Designator: 2SB734

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 23 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -