2SB926

Type Designator: 2SB926

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 135 °C

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 32 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -