IPA60R060P7 (60R60P7 ) 48A 600V
320,54 TL
IPA60R060P7 (60R60P7 ) 48A 600V
Type Designator: IPP60R060P7
Marking Code: 60R060P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 164 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 48 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 67 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 48 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package:
Type Designator: IPP60R060P7
Marking Code: 60R060P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 164 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 48 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 67 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 48 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package:
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