SKW30N60 30A 600V N-CH IGBT ( K30N60 )

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
 75% lower Eoff compared to previous generation combined with low conduction losses
 Short circuit withstand time – 10 s
 Designed for: - Motor controls - Inverter
 NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
 Very soft, fast recovery anti-parallel Emitter Controlled Diode
 Pb-free lead plating; RoHS compliant  Qualified according to JEDEC1 for target applications
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